Samsung 850 EVO 250GB 2.5 Inch SATA III Internal SSD

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Samsung 850 EVO 250GB 2.5 Inch SATA III Internal SSD order online now and Get it Delivered Same Day in Hyderabad and 2 to 3 Delivery All India

Product Overview

Samsung 850 EVO 250GB 2.5 Inch SATA III Internal SSD

  • Innovative 3D V-NAND Technology
  • Incredible Read/Write Performance
  • Enhanced Endurance and Reliability
  • Efficient Power Management

What is 3D V-NAND and how does it differ from existing technology?

Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilising a smaller footprint.

World’s 1st 2 TB SSD for extensive workloads

Introducing the world’s first 2 TB SSD for client PCs—the SSD 850 EVO 2 TB. Powered by 3D V-NAND, you can store your programs and data onto one drive, which is especially useful when editing and archiving a large number of Full HD multimedia files. The end result is fast data access times, programme load times, and multitasking—increasing overall computing speed for higher productivity. Enjoy better PC performance with a single spacious SSD.* *When compared to an environment using a combination of an HDD as a storage drive and an SSD as a boot drive.

Optimise daily computing with TurboWrite technology for unrivalled read/write speeds

Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario. *PCmark7 (250 GB ): 6,700 (840 EVO) > 7,600 (850 EVO) **Random Write (QD32, 120 GB): 36,000 IOPS (840 EVO) > 88,000 IOPS (850 EVO)

Guaranteed endurance and reliability bolstered by 3D V-NAND technology

The 850 EVO delivers guaranteed endurance and reliability by doubling the TBW* compared to the previous generation 840 EVO** backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices***. *TBW: Total Bytes Written **TBW: 43 (840 EVO) > 75 (850 EVO 120/250 GB),15 0(850 EVO 500/1 TB) ***Sustained Performance (250 GB): 3,300 IOPS (840 EVO) > 6,500 IOPS (850 EVO), Performance measured after 12 hours “Random Write” test

Warranty Information

Samsung Warranty


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